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FZT696BTA NPN Transistors(BJT) 180V 500mA/0.5A 70MHz 500 250mV/0.25V SOT-223 marking FZT696 medium powerhigh gain
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 180V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 70MHz |
直流电流增益hFE DC Current Gain(hFE) | 500 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc Power Dissipation | 2W |
Description & Applications | SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Gain of 500 at IC=100mA Very low saturation voltage Darlington replacement Battery powered circuits |
描述与应用 | SOT223 NPN硅平面中功率高增益晶体管 当IC=100MA时增益为500 非常低的饱和电压 达林顿更换 电池供电电路 |