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GN1010-P MESFET-N channel 6V 5mA-20mA SOT-143 marking 5AP RF application/low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-4V
漏极电流(Vgs=0V)IDSS
Drain Current
5mA-20mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsGaAs N-Channel MES For high-output high-gain amplification General-use wide-band amplifier Low noise With bandwidth control pin
描述与应用砷化镓N沟道MES 用于高输出的高增益放大 一般使用的宽带放大器 低噪音 随着带宽控制引脚
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