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HAT2096H N Channel Power MOS FET 30V 40A LFPAK MARKING 2096

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Product description
Drain-Source Voltage (Vds)  30V

Vgs(±)

Gate-Source Voltage

 20V
Drain Current (Id)  40A
Drain-Source On-State (Rds)  ID = 20 A, VGS = 10 V  RDS=4.2~5.3mΩ
ID = 20 A, VGS = 4.5 V RDS=7~10mΩ

Vgs (th)

Gate-Source Threshold Voltage

 
Power dissipation (Pd)  20W
Description & Applications  Silicon N Channel Power MOS FET 
Power Switching 
 
Capable of 4.5 V gate drive 
• Low drive current 
• High density mounting 
• Low on-resistance
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