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HAT2096H N Channel Power MOS FET 30V 40A LFPAK MARKING 2096
| Drain-Source Voltage （Vds） | 30V |
|
Vgs(±) Gate-Source Voltage |
20V |
| Drain Current （Id） | 40A |
| Drain-Source On-State （Rds） | ID = 20 A, VGS = 10 V RDS=4.2~5.3mΩ
ID = 20 A, VGS = 4.5 V RDS=7~10mΩ
|
|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | 20W |
| Description & Applications | Silicon N Channel Power MOS FET
Power Switching
Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
|
