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HMBT1815GLT1 NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 250mV/0.25V SOT-23/SC-59 marking C4G generalswitch and amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. |
| 描述与应用 | NPN外延平面晶体管 专为通用开关和放大器应用。 |
