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IPD03N03LAP MOSFET N-Channel 25V 90A TO-252/D-PAK marking 09N03LA low on-resistance/very high DC current capability/IPD03N03LAP

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Product description
最大源漏极电压Vds Drain-Source Voltage25V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current90A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.0032Ω/Ohm 60A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2-2V
耗散功率Pd Power Dissipation115W
Description & Applications• Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
描述与应用•非常适于高频DC / DC转换器 •符合到JEDEC1) 针对目标应用 •N沟道逻辑电平 •优秀的栅极电荷x R DS(ON) 产品(FOM) •卓越的热电阻 •175°C的工作温度 •无铅引脚电镀,符合RoHS
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