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IPD14N03L MOSFET N-Channel 30V 30A TO-252/D-PAK marking 14N03L low on-resistance/very high DC current capability/IPD03N03LAP
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 30A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0108Ω/Ohm @20A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2V |
| 耗散功率Pd Power Dissipation | 6W |
| Description & Applications | N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature dv/dt rated Ideal for fast switching buck converter |
| 描述与应用 | 逻辑电平 低导通电阻RDS（ON） 优秀的门占用×RDS上） 产品（FOM） 卓越的热电阻 175°C工作温度 dv / dt的额定 非常适于快速开关降压转换器？ |
