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IRF5803TR MOSFET P-Channel -40V -3.4A 0.112ohm SOT-163 marking G6 low on-resistance low gate charge
| 最大源漏极电压Vds Drain-Source Voltage | -40V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | -3.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.112Ω @-3.4A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--3V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |
