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IRF5810TR Complex FET -20V -2.9A SOT-163/SOT23-6 marking K6 ultra low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -2.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 135mΩ@ VGS = -2.5V, ID = -2.3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45~-1.2V |
| 耗散功率Pd Power Dissipation | 960mW/0.96W |
| Description & Applications | Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 双P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |
