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IRF6150 Complex FET -20V -7.9A BGA low thermal resistance batteryand load management application
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -7.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 52mΩ@ VGS = -2.5V, ID = -6.3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45~-1.2V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | Ultra Low RSS(on) per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Ree Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. |
| 描述与应用 | 每占位面积的超低RSS（上） 低热阻 ？双向P沟道开关 超级薄型（<0.8毫米） 可用的测试带稀土元素 描述 真正的芯片级封装是国际整流器。通过采用先进的加工技术和独特的包装概念，极低的导通电阻，并在同行业中最高的功率密度已可用于电池和负载管理应用。结合坚固耐用的设备的设计，国际整流器是众所周知的，这些好处，为设计师提供了一个非常有效和可靠的设备。 |
