IRLML2803TR MOSFET N-Channel 1.2A SOT-23/SC-59 marking 1B/B4/BB/BD/B6 low on-resistance|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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IRLML2803TR MOSFET N-Channel 1.2A SOT-23/SC-59 marking 1B/B4/BB/BD/B6 low on-resistance

Model：IRLML2803TR
Mark / screen / code / typing：1B/B4/BB/BD/B6
Manufacturer：
Date Code：05+
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	1.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.25Ω/Ohm @910mA,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.V
耗散功率Pd Power Dissipation	540mW/0.54W
Description & Applications	Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
描述与应用	超低导通电阻 N沟道MOSFET SOT-23的脚印薄型（高度<1.1mm）可在磁带和卷轴快速切换

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