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IRLML6401TR MOSFET P-Channel -430mA 0.050ohm SOT-23 marking F1/F3/F4/F5/F6/FB/FE ultra low on-resistance low profile
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -430mA/-0.43A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.050Ω @-4.3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.40--0.95V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel |
| 描述与应用 | 超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴 |
