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KST56 PNP transistors（BJT） -80V -500mA/-0.5A 50MHz 50 -250mV/-0.25V SOT-23/SC-59 marking 2G
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Epitaxial Silicon Transistor Driver Transistor Complement to KST06 |
| 描述与应用 | PNP外延硅晶体管 驱动晶体管 补充型KST06 |
