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MCH6619 Complex FET -30V -10A SOT-363/SC70-6/MCPH6 marking FT ultra high-speed switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -10A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1Ω@ VGS = -4V, ID = -300mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.2~-2.6V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 | 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •4V驱动器。 •一个单一的包装中包含的2MOSFET的复合型 |
