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MJD112T4 NPN Transistors(BJT) 100V 2A 25MHz 500~2000 2V~3V TO-252/DPAK marking MJD112
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 25MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 500~2000 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 2V~3V |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | Complementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode |
| 描述与应用 | Complementary power Darlington transistors HFE线性度好 ■高FT 频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管 |
