Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
MMBF0202PLT1 MOSFET P-Channel 20V 300mA/0.3A 0.9ohm SOT-23 marking P3 low on-resistance high efficiency
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.9Ω @200mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.4V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | •Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space |
| 描述与应用 | •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 |
