MMBT3906LT1 PNP transistors（BJT） -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2A high DC current gain|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MMBT3906LT1 PNP transistors（BJT） -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2A high DC current gain

Model：MMBT3906LT1
Mark / screen / code / typing：2A
Manufacturer：
Date Code：08+2rnopb 05+
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−40V
集电极连续输出电流IC Collector Current(IC)	−200mA/-0.2A
截止频率fT Transtion Frequency(fT)	250MHz
直流电流增益hFE DC Current Gain(hFE)	100~300
管压降VCE（sat） Collector-Emitter SaturationVoltage	-400mV/-0.4V
耗散功率Pc PoWer Dissipation	225mW/0.225W
Description & Applications	General Purpose Transistor Features • Pb−Free Packages are Available
描述与应用	通用晶体管特点 •无铅包可用

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