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MMBT5551LT NPN Transistors(BJT) 180V 600mA/0.6a 20~250 150mV~250mV SOT-23/SC-59 marking G1 high voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 20~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 150mV~250mV |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | High Voltage Transistors NPN Silicon • Pb−Free Packages are Available |
| 描述与应用 | 高电压晶体管 NPN硅 无铅包可用 |
