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MMBT6429LT1 NPN Transistors(BJT) 55V 200mA/0.2A 100Mhz~700Mhz 500~1250 200mV~600mV SOT-23/SC-59 marking M1L amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 55V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
截止频率fT Transtion Frequency(fT) | 100Mhz~700Mhz |
直流电流增益hFE DC Current Gain(hFE) | 500~1250 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV~600mV |
耗散功率Pc Power Dissipation | 225mW/0.225W |
Description & Applications | Amplifier Transistors NPN Silicon |
描述与应用 | 放大器晶体管 NPN硅 |