MMBT6517 NPN Transistors(BJT) 350V 500mA/0.5A 20~200 300mV/0.3V SOT-23/SC-59 marking 1Z high voltage |Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MMBT6517 NPN Transistors(BJT) 350V 500mA/0.5A 20~200 300mV/0.3V SOT-23/SC-59 marking 1Z high voltage

Model：MMBT6517
Mark / screen / code / typing：1Z
Manufacturer：
Date Code：05+
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	350V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	350V
集电极连续输出电流IC Collector Current(IC)	500mA/0.5A
截止频率fT Transtion Frequency(fT)
直流电流增益hFE DC Current Gain(hFE)	20~200
管压降VCE（sat） Collector-Emitter Saturation Voltage	300mV/0.3V
耗散功率Pc Power Dissipation	225mW/0.225W
Description & Applications	High Voltage Transistor NPN Silicon
描述与应用	高电压晶体管 NPN硅

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