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MRF949BT1 NPN Transistors(BJT) 20V 50mA 9Ghz 50 SOT-523 marking TB high gain ,low noisesmall signal amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
Description & Applications• The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. • Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA • High Current Gain–Bandwidth Product, f t = 9 GHz @ 15 mA • Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA • Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation • Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel
描述与应用•该RF线NPN硅低噪声晶体管 摩托罗拉的MRF949是一个高性能的NPN晶体管设计用于 高增益,低噪声小信号放大器。 MRF949非常适合低 电压的无线应用。该器件具有9 GHz的直流电流 增益带宽产品具有优异的线性度。 •低噪声系数,的NFmin1.4分贝(典型值)@ 1 GHz的@5毫安 •高电流增益带宽积,F 吨  =9 GHz的15毫安 •最大稳定增益= 18分贝@1 GHz的@5毫安 •输出三阶截,OIP3=+29 dBm的@ 1 GHz的@ 10毫安 •全镀金氮化硅钝化离子注入 •可在磁带和卷轴包装选项: T1后缀= 3,000单位每卷
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