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MSB709-RT1G PNP transistors（BJT） -60V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 210~340 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available |
| 描述与应用 | PNP硅通用晶体管放大器 特点 无铅包装是可用 |
