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MSB709-RT1G PNP transistors(BJT) -60V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−45V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
210~340
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsPNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available
描述与应用PNP硅通用晶体管放大器 特点 无铅包装是可用
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