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MTD20P03HDLT4 MOSFET P-Channel 30V 1.9A 0.09ohm SOT-23 marking 20P03HL
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | -1.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.09Ω @950mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 7.5W |
| Description & Applications | Features • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available |
| 描述与应用 | •雪崩能量 •源漏二极管恢复时间等同于离散 快恢复二极管 •二极管的特性是桥电路中使用 •IDSS和VDS（上） 指定高温 •无铅包可用 |
