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NDS0610 MOSFET P-Channel -60V 120mW/0.12A 1.0ohm SOT-23 marking 610 small signal switch low on-resistance high saturation current
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.12A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.0Ω @-500mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--3.5V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | Features • −0.12A, −60V. RDS(ON) = 10 Ω @ VGS = −10 V RDS(ON) = 20 Ω @ VGS = −4.5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDS(ON) • High saturation current |
| 描述与应用 | •电压控制p沟道小信号开关 •高密度电池设计的低RDS（ON） •高饱和电流“ |
