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P0110002P MESFET-N channel 8V 300mA SOT-89 marking RF application/high drain efficiency

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Product description
最大源漏极电压Vds
Drain-Source Voltage
8V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-4V
漏极电流(Vgs=0V)IDSS
Drain Current
300mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
1.7W
Description & Applications250mW GaAs Power FET (Pb-Free Type) Up to 2.7 GHz frequency band Beyond +22 dBm output power Up to +41dBm Output IP3 High Drain Efficiency SOT-89 SMT Package (Pb-free) Low Noise Figure Wireless communication system Cellular, PCS, PHS, W-CDMA, WLAN
描述与应用250MW砷化镓功率场效应管(无铅型) 高达2.7 GHz频段 超越+22 dBm的输出功率 高达+41 dBm输出IP3 漏极效率高 SOT-89贴片封装(无铅) 低噪声图 无线通信系统
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