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P0110002P MESFET-N channel 8V 300mA SOT-89 marking RF application/high drain efficiency
| 最大源漏极电压Vds Drain-Source Voltage | 8V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 300mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | |
| 耗散功率Pd Power Dissipation | 1.7W |
| Description & Applications | 250mW GaAs Power FET (Pb-Free Type) Up to 2.7 GHz frequency band Beyond +22 dBm output power Up to +41dBm Output IP3 High Drain Efficiency SOT-89 SMT Package (Pb-free) Low Noise Figure Wireless communication system Cellular, PCS, PHS, W-CDMA, WLAN |
| 描述与应用 | 250MW砷化镓功率场效应管（无铅型） 高达2.7 GHz频段 超越+22 dBm的输出功率 高达+41 dBm输出IP3 漏极效率高 SOT-89贴片封装（无铅） 低噪声图 无线通信系统 |
