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PBSS4140DPN NPN+PNP Complex Bipolar Transistor 40V/-40V 1A/-1A 300~900 SOT-163/SC-74/SOT457/SOT23-6 marking M2 switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)40V/-40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)40V/-40V
集电极连续输出电流IC Collector Current(IC)1A/-1A
截止频率fT Transtion Frequency(fT)150MHz
直流电流增益hFE DC Current Gain(hFE)300~900
管压降VCE(sat) Collector-Emitter Saturation Voltage250mV-250mV
耗散功率Pc Power Dissipation600mW
Description & ApplicationsFeatures • 40 V low VCEsat NPN/PNP transistor • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices).
描述与应用特点 •40 V低VCEsat NPN/ PNP晶体管 •600 mW的总功耗 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性,由于产生的热量减少 •替换两个SOT23包装相同的PCB面积上的晶体管的低VCEsat •减少所需PCB面积 •减少取放成本。 应用 •通用开关和静音 •LCD背光 •供电线路开关电路 •电池驱动设备(手机,摄像机和手持设备)。
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