Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
PBSS4240T NPN Transistors(BJT) 40V 2A 230MHz 470 70mV~320mV SOT-23/SC-59 marking ZE
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 230MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 470 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 70mV~320mV |
| 耗散功率Pc Power Dissipation | 480mW/0.48W |
| Description & Applications | 40 V, 2A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package |
| 描述与应用 | 40 V，2A NPN低VCEsat（BISS）晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于减少热 代 •更换SOT89/SOT223标准包装 晶体管。 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •重型电池供电设备（电机和灯泡 驱动程序）。 说明 NPN低VCEsat 在SOT23塑料封装晶体管 |
