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PBSS5160T PNP transistors（BJT） -80V -900mA/-0.9A 220MHz 350 -330mV/-0.33V SOT-23/SC-59 load driver/DC-DC converter
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -900mA/-0.9A |
| 截止频率fT Transtion Frequency(fT) | 220MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 350 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -330mV/-0.33V |
| 耗散功率Pc PoWer Dissipation | 270mW/0.27W |
| Description & Applications | General description PNP low VCE(sat )Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation Reduces Printed-Circuit Board (PCB) area required Cost-effective replacement for medium power transistors BCP52 and BCX52 Applications Major application segments: Automotive、Telecom infrastructure、Industrial、Power management、DC-to-DC conversion、Supply line switching、Peripheral driver、Driver in low supply voltage applications (e.g. lamps and LEDs)、 Inductive load drivers (e.g. relays, buzzers and motors) |
| 描述与应用 | 一般说明 PNP低VCE（饱和）突破性小信号（BISS）晶体管，采用SOT23（TO-236AB）小型表面贴装器件（SMD）塑料包装。 特点 低集电极 - 发射极饱和电压VCE监测 ？高集电极电流能力IC和ICM ？由于产生的热量少，高效率 ？降低印刷电路板（PCB）面积 中等功率晶体管的成本效益的替代？BCP52和BCX52 应用 主要应用领域： ？汽车，电信基础设施，？工业，电源管理，DC-DC转换，切换供电线路，外设驱动器，驱动器在低电源电压应用（如灯和LED），？感性负载驱动器（如继电器，蜂鸣器和电机） |
