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PEMD9 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=100 R1=10KΩ R2=47KΩ 300mW/0.3W SOT-563/SOT666 marking D9 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/-50V |
| Collector Current(IC) Q1/Q2 | 100mA/-100mA |
| Q1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 0.21 |
| DC Current Gain(hFE) Q1/Q2 | 100 |
| Transtion Frequency(fT) Q1/Q2 | |
| Power Dissipation Q1/Q2 | 300mW/0.3W |
| Description & Applications | Features • PNP/PNP resistor-equipped transistors; • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. |
| 描述与应用 | 特点 •PNP / PNP电阻配备晶体管; •300 mW的总功耗 •非常小的1.6×1.2毫米的超薄封装 •自对准直引线在焊接过程中，由于 •替换两个SC-75/SC-89封装晶体管 相同的PCB面积 •减少所需PCB面积 •减少取放成本。 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。 |
