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si1406dh-T1-E3 MOSFET N-Channel 20V 3.9A SOT-363/SC70-6/TSSOP6/SC-88 marking abc low on-resistance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current3.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.065Ω/Ohm @3.9A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.45-1.2V
耗散功率Pd Power Dissipation1.56W
Description & ApplicationsN-Channel 25-V (D-S) MOSFET FEATURES TrenchFET Power MOSFETS 1.8-V Rated hermally Enhanced SC-70 Package
描述与应用N沟道25-V(D-S)的MOSFET 耐热增强型SC-70封装
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