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SI3441DV MOSFET P-Channel -20V -3.3A 0.067ohm SOT-163 marking 41

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-3.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.067Ω @-3.3A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.45V-0.95V
耗散功率Pd
Power Dissipation		2W
Description & ApplicationsP-Channel 2.5-V (G-S) MOSFET
描述与应用P沟道2.5-V（G-S）的MOSFET
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