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SI8405DB MOSFET P-Channel -12V -4.9A 0.0046ohm Vth:-0.45V-0.95V 2X2 4-MFP marking 8405 power MOSFET
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -4.9A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.0046Ω @-1A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V-0.95V |
| 耗散功率Pd Power Dissipation | 2.77W |
| Description & Applications | FEATURES TrenchFET Power MOSFET New MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area |
| 描述与应用 | TrenchFET？功率MOSFET 新的MICRO FOOT？芯片级封装 减少占位面积简介（0.62毫米） 每占位面积导通电阻 |
