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SSM3J01F MOSFET P-Channel -30V -0.7A 0.3ohm SOT-23 marking DE high-speed switch low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -700mA/-0.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.3Ω @-350mA,-4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.6V--1.1V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | High Speed Switching Applications • Small package • Low on resistance : Ron = 0.4 Ω (max) (VGS = −4 V) Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage |
| 描述与应用 | 高速开关应用 •小型封装 •低导通电阻RON =0.4Ω（最大值）（VGS=-4 V） RON =0.6Ω（最大值）（VGS=-2.5 V） •低栅极阈值电压 |
