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SSM3J09FU MOSFET P-Channel -20V -200mA 2.1ohm SOT-323 marking DK high-speed switch power managementswitch low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-0.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
2.1Ω @-100mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.1V--1.8V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsPower Management Switch High Speed Switching Applications Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) Ron = 0.6 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
描述与应用电源管理开关 高速开关应用 小包装 低导通电阻RON =0.4Ω(最大)(@ VGS=-4 V) 罗恩= 0.6Ω(最大)(@ VGS=-2.5 V) 低栅极阈值电压
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