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SSM3J112TU MOSFET P-Channel -30V -1.1A 0.031ohm SOT-323 marking JJ5 high-speed switch 4V drive low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -1.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.031Ω @-500mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8V--1.8V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | High Speed Switching Applications • 4V drive • Low on-resistance: Ron = 790mΩ (max) (@VGS = −4 V) Ron = 390mΩ (max) (@VGS = −10 V) |
| 描述与应用 | 高速开关应用 •4V驱动器 •低导通电阻RON =790mΩ（最大）（@ VGS=-4 V） 罗恩=390mΩ（最大）（@ VGS=10V） |
