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SSM3K01T MOSFET N-Channel 30V 3.2A SOT-23/SC-59 marking KW low noise/high AGC-ratings
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.12Ω/Ohm @1.6A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • Small package • Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 •小型封装 •低导通电阻RON =120MΩ（最大（VGS=4 V） 罗恩=150MΩ（最大）VGS=2.5 V） •低栅极阈值电压VTH =0.6〜1.1 V（VDS= 3 V，ID= 0.1毫安） |
