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SSM6E01TU Complex FET -12V/20V -10A/50mA SOT-363/SC70-6/UF6 marking KTA load switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V/20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/10V
最大漏极电流Id
Drain Current
-10A/50mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
240mΩ@ VGS = -2.5V, ID = -500mA /1Ω@ VGS = 2.5V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4~-1.1V/0.7~1.3V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applications P-channel MOSFET and N-channel MOSFET incorporated into one package. Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation
描述与应用TOSHIBA多芯片设备 硅P沟道MOS类型(U-MOS II)+ N沟道MOS类型(平面) 负载开关应用中 P沟道MOSFET和N沟道MOSFET的纳入一包装。 低功耗由于P沟道MOSFET,具有低RDS(ON)和低电压操作
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