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SSM6J07FU MOSFET P-Channel -30V -0.8A 0.35ohm SOT-363 marking KDF power managementswitch high-speed switch low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-800mA/-0.8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.35Ω @-400mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.1--1.9V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsPower Management Switch High Speed Switching Applications Small package Low on resistance Ron = 450 mΩ (max) (VGS = −10 V) Ron = 800 mΩ (max) (VGS = −4 V)
描述与应用电源管理开关 高速开关应用 小型封装 低导通电阻 RON =450MΩ(最大值(VGS= -10 V) 罗恩=800MΩ(最大)(VGS=-4 V)
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