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SSM6K08FU MOSFET N-Channel 20V 1.6A SOT-363/SC70-6/TSSOP6/SC-88/US6 marking KDC fast switch/low on-resistance/Low Gate Threshold Voltage
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.105Ω/Ohm @800mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | High Speed Switching Applications Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) |
| 描述与应用 | 高速开关应用 小型封装 低导通电阻RON =105MΩ（最大）（@ VGS=4 V） RON =140MΩ（最大）（@ VGS=2.5 V） 高速开关：吨= 16 ns（典型值）花花公子= 15 ns（典型值） |
