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Integrated Circuit（IC） NAND gate TC7SZ00AFE SOT-553/ESV marking R1
| 逻辑类型 Logic Type | 与非门 NAND Gate |
| 电路数 Number of Circuits | 1 |
| 输入数 Number of Inputs | 2 |
| 电源电压Vcc Voltage - Supply | 1.8V~5.5V |
| 静态电流Iq Current - Quiescent (Max) | 2µA |
| 输出高，低电平电流 Current - Output High, Low | -32mA,32mA |
| 低逻辑电平 Logic Level - Low | |
| 高逻辑电平 Logic Level - High | |
| 传播延迟时间@Vcc，CL Max Propagation Delay @ V, Max CL | 4.3ns @ 4.5V~5.5V，15pF |
| Description & Applications | 2 Input NAND Gate ；High output drive: ±24 mA (min) at VCC = 3 V • Super high speed operation: tPD = 2.4 ns (typ.) • at VCC = 5 V, 50 pF • Operation voltage range: VCC (opr) = 1.8~5.5 V • Supply voltage data retention: VCC = 1.5~5.5 V • 5.5-V tolerant inputs. • Matches the performance of TC74LCX series when operated at 3.3-V VCC |
| 描述与应用 | 2输入与非门;高输出驱动器：±24 mA（分钟）VCC= 3 V •超高速运转：TPD =2.4 ns（典型值） •VCC= 5 V，50 pF的 •工作电压范围：VCC（OPR） =1.8〜5.5 V •电源电压数据保存：VCC=1.5〜5.5 V •5.5-V宽容投入。 •操作时的性能相匹配的TC74LCX系列 3.3-V的VCC |
