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TP0610T-T1 MOSFET P-Channel -60V -180mA 10ohm SOT-23 marking TO high-speed switch low on-resistance
最大源漏极电压Vds Drain-Source Voltage | -60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | -180mA/-0.18A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 10Ω @-500mA,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1.9--2.4V |
耗散功率Pd Power Dissipation | 800mW/0.8W |
Description & Applications | High-Side Switching Low On-Resistance: 8 Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 Pf |
描述与应用 | 高边开关 低导通电阻:8? 低阈值:-1.9 V 开关速度快:16纳秒 低输入电容:15 pF的 |