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UPA809T NPN+NPN Complex Bipolar Transistor 9V 100mA 9GHZ HEF=80~160 SOT-363/SC-88 marking T88 switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 9V

V(BR) CEO

Collector-Emitter Voltage

 6V100M
Collector Current(IC) 100MA/0.1A
Transtion Frequency(fT)  9GHZ
DC Current Gain(hFE)  80~160

VCE (sat)

Collector-Emitter Saturation Voltage

 
Power Dissipation (Pd)  200MW/0.2W
Description & Applications  MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
 Built-in 2 Transistors (2 × 2SC5193)
Technical Documentation Download Read Online
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