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UPA809T NPN+NPN Complex Bipolar Transistor 9V 100mA 9GHZ HEF=80~160 SOT-363/SC-88 marking T88 switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
9V |
V(BR) CEO Collector-Emitter Voltage |
6V100M |
Collector Current(IC) | 100MA/0.1A |
Transtion Frequency(fT) | 9GHZ |
DC Current Gain(hFE) | 80~160 |
VCE (sat) Collector-Emitter Saturation Voltage |
|
Power Dissipation (Pd) | 200MW/0.2W |
Description & Applications | MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Built-in 2 Transistors (2 × 2SC5193)
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Technical Documentation Download | Read Online |