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XP0431N00L NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 80 SOT-363/SC-88 marking HC switch and digital circuit application
Q1 Collector-Base Voltage(VCBO) | 50V |
Q1Collector-Emitter Voltage(VCEO) | 50V |
Q1 Collector Current(IC) | 100MA |
Q2 Collector-Base Voltage(VCBO) | -50V |
Q2Collector-Emitter Voltage(VCEO) | -50V |
Q2Collector Current(IC) | -100MA |
Q1 Input Resistance(R1) | 47KΩ |
Q1Base-Emitter Resistance(R2) | 4.7KΩ |
Q1(R1/R2) Q1 Resistance Ratio | 0.1 |
Q2 Input Resistance(R1) | 4.7KΩ |
Q2Base-Emitter Resistance(R2) | 47KΩ |
Q2(R1/R2) Q2 Resistance Ratio | 0.1 |
DC Current Gain(hFE) Q1/Q2 | 80 / 80 |
Transtion Frequency(fT) Q1/Q2 | 150MHZ / 150MHZ |
Power Dissipation | 150MW |
Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
UN221N+UN211N
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