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XP4312 NPN+PNP Transistors with built-in resistor 50V 0.1A R1=R2=22KΩ SOT-363/SC-88 marking 7T switch and digital circuit application
Q1 Collector-Base Voltage(VCBO) | 50V |
Q1Collector-Emitter Voltage(VCEO) | 50V |
Q1 Collector Current(IC) | 100MA |
Q2 Collector-Base Voltage(VCBO) | -50V |
Q2Collector-Emitter Voltage(VCEO) | -50V |
Q2Collector Current(IC) | -100MA/-0.1A |
Q1 Input Resistance(R1) | 22KΩ |
Q1Base-Emitter Resistance(R2) | 22KΩ |
Q1(R1/R2) Q1 Resistance Ratio | 1 |
Q2 Input Resistance(R1) | 22KΩ |
Q2Base-Emitter Resistance(R2) | 22KΩ |
Q2(R1/R2) Q2 Resistance Ratio | 1 |
DC Current Gain(hFE) Q1/Q2 | 60 / 60 |
Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
Power Dissipation | 150MW/0.15W |
Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
UNR2212 (UN2212) + UNR2112 (UN2112)
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