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XP4312 NPN+PNP Transistors with built-in resistor 50V 0.1A R1=R2=22KΩ SOT-363/SC-88 marking 7T switch and digital circuit application

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Product description

 

 

Q1  Collector-Base Voltage(VCBO)  50V
Q1Collector-Emitter Voltage(VCEO)  50V
Q1 Collector Current(IC) 100MA
Q2 Collector-Base Voltage(VCBO)  -50V
Q2Collector-Emitter Voltage(VCEO)  -50V
Q2Collector Current(IC)  -100MA/-0.1A
Q1 Input Resistance(R1)   22KΩ
Q1Base-Emitter Resistance(R2)   22KΩ
Q1(R1/R2) Q1 Resistance Ratio  1
Q2 Input Resistance(R1)   22KΩ
Q2Base-Emitter Resistance(R2)   22KΩ
Q2(R1/R2) Q2 Resistance Ratio  1
 DC Current Gain(hFE) Q1/Q2  60 / 60
Transtion Frequency(fT) Q1/Q2  150MHZ / 80MHZ
 Power Dissipation  150MW/0.15W
Description & Applications
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
 UNR2212 (UN2212) + UNR2112 (UN2112)
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