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XP6211 NPN+NPN Transistors with built-in resistor 50V 100mA R1=R2=10KΩ HEF=35 150mW/0.15W SOT-363/SC-88/SC70-6 marking 7Z switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
50V |
V(BR) CEO Collector-Emitter Voltage |
50V |
Collector Current(IC) | 100MA |
Input Resistance(R1) | 10KΩ |
Base-Emitter Resistance(R2) | 10KΩ |
Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
DC Current Gain(hFE) | 35 |
Transtion Frequency(fT) | 150MHZ |
Power Dissipation (Pd) | 150MW |
Description & Applications | Silicon NPN epitaxial planer transistor
For switching/digital circuits
■ Features
● Two elements incorporated into one package.
(Transistors with built-in resistor)
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
UNR1211(UN1211) × 2
|
Technical Documentation Download | Read Online |