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FDN5618P MOSFET P-Channel -60V -1.25mA 0.148ohm SOT-23 marking 618

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-1.25A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.148Ω @-1.25A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1--3V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & Applications Fast switching speed • High performance trench technology for extremely low RDS(ON)
描述与应用开关速度快 •高性能沟道技术极 低RDS(ON)
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