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2SK2491 MOSFET N-Channel 180V 4A TO-263 marking K2491 low on-resistance/fast switch/wide SOA/low-voltage drive
最大源漏极电压Vds Drain-Source Voltage | 180V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 4A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.08Ω/Ohm @10A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2-4V |
耗散功率Pd Power Dissipation | 70W |
Description & Applications | Small switching (60V, 2A) Silicon N-channel MOSFET Features N-Channel Enhancement type Input capacitance(Ciss) is small. Especially,input capacitance at 0 biass is small. The static Rds(on) is small The switching time is fast |
描述与应用 | 小开关(60V,2A) 硅N沟道MOSFET 特性 N沟道增强型 输入电容(CISS)是很小的。 特别,输入电容在0 预偏电阻很小。 静态的Rds(on)很小 开关时间快 |