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KTC801E-GR NPN+NPN Complex Bipolar Transistor 60V 150mA HEF=200~400 80MHZ SOT-563/TES6 marking L6 switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
60V |
V(BR) CEO Collector-Emitter Voltage |
50V |
Collector Current(IC) | 150MA/0.15A |
Transtion Frequency(fT) | 80MHZ |
DC Current Gain(hFE) | 200~400 |
VCE (sat) Collector-Emitter Saturation Voltage |
0.3V |
Power Dissipation (Pd) | 0.2W |
Description & Applications | EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2
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Technical Documentation Download | Read Online |