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BC848BL3 NPN Transistors(BJT) 30V 100mA/0.1A 250MHz 200~450 200~600 mV SOD-923/TSLP-3-1 marking 1K

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
30V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
200~450
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200~600 mV
耗散功率Pc
Power Dissipation
250mW/0.25W
Description & ApplicationsNPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
描述与应用NPN硅晶体管自动对焦 •AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压,低管压降 •低噪音之间30 Hz和15千赫 •互补类型:    BC856-BC860(PNP) •符合AEC Q101
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