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2SC6026MFV-GR NPN Transistors(BJT) 60V 150mA/0.15A 60MHz 200~400 100mV/0.1V S0T-723/VESM marking HG general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | 60MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Transistor Silicon NPN Epitaxial Type General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 |
| 描述与应用 | 晶体管的硅NPN外延型 通用放大器应用 •高电压和高电流 VCEO=50 V，IC=150 mA（最大） •优秀的HFE线性： HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）= 0.95 •高HFE：HFE=120〜400 |
