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2SC5950G0LS0 NPN Transistors(BJT) 60V 100mA/0.1A 100MHz 160~460 100mV/0.1V SOT-323/SC-70 marking 7M

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
160~460
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsSilicon NPN epitaxial planar type For general amplifi cation Features Features * High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio hFFEE * mini typ package, allowing downsizing of the equipment and Smini typ package, allowing downsizing of the equipment and aautomatic utomatic insertion through the tape packing
描述与应用NPN硅外延平面型 对于一般的扩增阳离子 特点特点 *高正向电流传输比h高正向电流传输比h高正向电流传输比hFFEE *迷你典型包装,允许缩减的设备和SMINI的典型包装允许设备和A自动utomatic的瘦身 通过磁带插入包装
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